VESD05A2-03F document number 81201 rev. 1.2, 03-mar-06 vishay semiconductors www.vishay.com 1 1 2 3 2-line esd protection diode in sot490 features ? small sot490 package ? very low leakage current ? esd protection to iec 61000-4-2 30 kv (air) ? esd protection to iec 61000-4-2 20 kv (contact) ? two line asymmetric al esd-protection ( bias ) ? one line asymmetrical esd-protection ( bisy ) ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: sot490 (plastic package) lead free; non magnetic molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: 2.5 mg packaging codes/options: gs18 = 10 k per 13" reel (8 mm tape), 10 k/box gs08 = 3 k per 7" reel (8 mm tape), 15 k/box marking: 4 = date code (example only) a1 = type code for VESD05A2-03F maximum ratings and the rmal characteristics t a = 25 c unless otherwise specified parameter symbol value unit esd air discharge per iec 61000-4-2 v esd 30 kv esd contact dischar ge per iec 61000-4-2 v esd 20 kv operating temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c 1 2 3 4 a1 e3
www.vishay.com 2 document number 81201 rev. 1.2, 03-mar-06 VESD05A2-03F vishay semiconductors electrical characteristics t a = 25 c unless otherwise specified bias -mode (2-line bi directional as ymmetrical protection mode) with the VESD05A2-03F two signal or data lines (l1, l2) can be clamped to ground. due to the different clamp- ing levels in forward and reverse direction the VESD05A2-03F clamping behavior is bi directional and as ym- metric ( bias ). parameter test conditions synbol min. ty p. max. unit reverse stand-off voltage at max. reverse current v rwm 5 v max. reverse current at v r = 5 v i r 0.1 a max. clamping voltage at i pp = 3 a acc. iec 61000-4-5 v c 8.9 11 v max. peak pulse current acc. iec 61000-4-5 see fig. 1 i ppm 3a min. reverse breakdown voltage at i r = 1 ma v br 6.0 6.8 7.5 v capacitance at v r = 0 v; f = 1 mhz c d 20 23 pf forward voltage at i f = 200 ma; t p < 300 s v f 0.95 1.2 v esd-clamping voltage (overshoot) at + 8 kv esd-pulse acc. iec 61000-4-2 v c-esd +79 v esd-clamping voltage (undershoot) at - 8 kv esd-pulse acc. iec 61000-4-2 v c-esd -72 v 19742 l1 l2
VESD05A2-03F document number 81201 rev. 1.2, 03-mar-06 vishay semiconductors www.vishay.com 3 bisy -mode (1-line bi directional sy mmetrical protection mode) single-line bidirectional symmetrical esd-protection ( bisy ) with the VESD05A2-03F one signal or data line (l1) can be clamped to ground. due to the same clamping levels in postive and negative direction the VESD05A2-03F voltage clamping behaviour is bi directional and sy mmetrical ( bisy ). in the bisy-mode pin no. 3 must not be connected. the load capacitance is about the half of the capacitance of the bias-mode. parameter test conditions synbol min. ty p. max. unit reverse stand-off voltage at max. reverse current v rwm 5.5 v max. reverse current at v r = 5.5 v i r 0.1 a max. clamping voltage at i pp = 3 a acc. iec 61000-4-5 v c 10.6 12 v max. peak pulse current acc. iec 61000-4-5 see fig. 1 i ppm 3a min. reverse breakdown voltage at i r = 1 ma v br 6.7 7.5 8.2 v capacitance at v r = 0 v; f = 1 mhz c d 10 12 pf esd-clamping voltage at 8 kv esd-pulse acc. iec 61000-4-2 v c-esd 100 v 19741 l1
www.vishay.com 4 document number 81201 rev. 1.2, 03-mar-06 VESD05A2-03F vishay semiconductors typical characteristics t a = 25 c unless otherwise specified figure 1. 8/20 s peak pulse current wave form acc. iec 61000-4-5 figure 2. typical capacitance c d vs. reverse voltage v r figure 3. typical forward current i f vs. forward voltage v f 1973 8 100 % 8 0 % 60 % 40 % 20 % 0 % 010203040 8 s to 100% 20 s to 50% i ppm time in s 19739 25 20 15 10 5 0 012345 f = 1 mhz bias - mode bisy - mode c d in pf v r in v 19747 100 10 1 0.1 0.01 0.001 0.5 0.6 0.7 0. 8 0.9 1 i f in ma v f in v figure 4. typical reverse voltage v r vs. reverse current i r figure 5. typical clamping volt age vs. peak pulse current i pp figure 6. typical clam ping performance at 8 kv contact discharge (acc. iec 61000-4-2) 1974 8 bisy - mode bias - mode 9 8 7 6 5 4 3 2 1 0 0.01 0.1 1 10 100 1000 10000 v r in v i r in a 19749 bisy - mode bias - mode re v erse bias - mode for w ard meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) 12 10 8 6 4 2 0 012345 v c in v i pp in a 19773 v c-esd in v t in ns 100 8 0 60 40 20 0 - 20 - 40 - 10 0 10203040506070 8 090 bias - mode acc. iec 61000-4-2 + 8 k v contact discharge
VESD05A2-03F document number 81201 rev. 1.2, 03-mar-06 vishay semiconductors www.vishay.com 5 figure 7. typical clamping perform ance at 8 kv contact discharge (acc. iec 61000-4-2) figure 8. typical clamping perfo rmance at - 8 kv contact discharge (acc. iec 61000-4-2) figure 9. typical clamping perfo rmance at - 8 kv contact discharge (acc. iec 61000-4-2) 19752 v c-esd in v t in ns bisy - mode acc. iec 61000-4-2 + 8 k v contact discharge 120 100 8 0 60 40 20 0 - 20 - 40 - 10 0 10203040506070 8 090 19753 v c-esd in v t in ns 40 20 0 - 20 - 40 - 60 - 8 0 - 10 0 10203040506070 8 090 bias - mode acc. iec 61000-4-2 - 8 k v contact discharge 19754 v c-esd in v t in ns bisy - mode acc. iec 61000-4-2 - 8 k v contact discharge 40 20 0 - 60 - 40 - 20 - 8 0 - 100 - 120 - 100 10203040506070 8 090 figure 10. typical clamping vo ltage at esd contact discharge (acc. iec 61000-4-2) 19755 v c-esd in v v esd in k v acc. iec 61000-4-2 contact discharge bisy - mode bisy - mode bias - mode bias - mode 400 300 200 100 0 - 100 - 200 - 300 - 400 0 5 10 15 20 25 30
www.vishay.com 6 document number 81201 rev. 1.2, 03-mar-06 VESD05A2-03F vishay semiconductors package dimensions in mm (inches) - sot490 19740
VESD05A2-03F document number 81201 rev. 1.2, 03-mar-06 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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